Field-effect transistors have been fabricated using single-walled carbon nanotubes (SWCNTs) and double-walled carbon nanotubes (DWCNTs), and their electrical transport properties have been studied comparatively. While a semiconducting SWCNT exhibits better field-effect characteristics than a DWCNT counterpart, the DWCNT shows more complicated response to external gate modulation. Depending on the nature of the two shells of a DWCNT, i.e., whether the shell is semiconducting (S) or metallic (M), a DWCNT device can be described as either S-S, or S-M, or M-S, or M-M. It was found that the S-S and M-M or M-S devices show similar field-effect characteristics to those found in SWCNT devices. But for S-M DWCNT devices, distinct field-effect characteristic was found and attributed to the combined effects of intershell interactions and screening by free carriers of the inner metallic shell. The S-M DWCNT devices thus provide a perfect system for studying the important intershell interaction, and information on the effect of this interaction on the electrical properties of a multi-walled carbon nanotube can be obtained by a comparative study of S-M DWCNT and S-SWCNT devices.