Field emission in doped nanotubes

J Nanosci Nanotechnol. 2005 Sep;5(9):1421-34. doi: 10.1166/jnn.2005.305.

Abstract

Doping into nanotubes is an attractive and significant way to tailor their electron transport and emission properties. This article reviews some recent experimental and theoretical advances in the studies of doping behaviors in carbon nanotubes and gallium nitrogen nanotubes, and doping effects on their field electron emission properties. The general theory for field emission mechanism of one-dimensional nanosystems is presented to provide an overall picture of the field emission process and doping behavior. Potential applications of doped nanotubes as diverse nanoscale emitters, microscopy probes, electronic guns and nanoelectronic devices are discussed.

Publication types

  • Research Support, Non-U.S. Gov't
  • Review

MeSH terms

  • Computer Simulation
  • Crystallization / methods*
  • Electric Wiring
  • Electrochemistry / instrumentation
  • Electrochemistry / methods*
  • Electromagnetic Fields*
  • Materials Testing
  • Models, Chemical*
  • Molecular Conformation
  • Nanotubes / analysis
  • Nanotubes / chemistry*
  • Nanotubes / ultrastructure*
  • Particle Size
  • Semiconductors*
  • Surface Properties