Semiconducting surface reconstructions of p-type Si(100) substrates at 5 K

Phys Rev Lett. 2004 May 28;92(21):216101. doi: 10.1103/PhysRevLett.92.216101. Epub 2004 May 27.

Abstract

We report scanning tunneling microscopy (STM) studies of the technologically important Si(100) surface that reveal at 5 K the coexistence of stable surface domains consisting of the p(2 x 1) reconstruction along with the c(4 x 2) and p(2 x 2) reconstructions. Using highly resolved tunneling spectroscopic measurements and tight binding calculations, we prove that the p(2 x 1) reconstruction is asymmetric and determine the mechanism that enables the contrast variation observed in the formation of the bias-dependent STM images for this reconstruction.