Preroughening and roughening transitions are observed on the GaAs(001) surface using scanning tunneling microscopy. By tuning the substrate temperature or As4 pressure the surface morphology can be made free of islands, covered with one monolayer high islands or covered with islands on top of islands forming a wedding-cake-type structure. These three distinct surface morphologies are classified as ordered flat (OF), disordered flat (DOF), and rough within the restricted solid-on-solid model. Here, the DOF phase is macroscopically flat; however, an up-down-up-down step pattern persists across the entire surface. Using this model we have determined the next-nearest-neighbor interaction energy to be about 0.05 eV.