The use of cleaved, [111]-oriented monocrystalline InAs probe tips enables state-specific imaging in constant-current filled-state scanning tunneling microscopy. On Si(111)-(7 x 7), the adatom or rest-atom dangling-bond states can thus be mapped selectively at different tip-sample bias. This state-selective imaging is made possible by energy gaps in the projected bulk band structure of the semiconductor probe. The lack of extended bulk states in these gaps gives rise to efficient energy filtering of the tunneling current, to which only sample states not aligned with a gap contribute significantly.