Theoretical studies of Si-O and Si-N bonding arrangements on vicinal Si(111) wafers
Phys Rev B Condens Matter
.
1994 May 15;49(19):14003-14006.
doi: 10.1103/physrevb.49.14003.
Authors
Z Jing
,
G Lucovsky
,
JL Whitten
PMID:
10010353
DOI:
10.1103/physrevb.49.14003
No abstract available